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7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | |
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Vishay Siliconix | MOSFET N-CH 400V 490MA 4-DIP | 4-DIP (0.300", 7.62mm) | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | 4-DIP, Hexdip, HVMDIP | N-Channel | 500V | 360pF @ 25V | 1W (Ta) | 370mA (Ta) | 10V | 3 Ohm @ 220mA, 10V | 4V @ 250µA | 24nC @ 10V | ±20V | ||||
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Vishay Siliconix | MOSFET N-CH 500V 4.5A D2PAK | 4-DIP (0.300", 7.62mm) | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | 4-DIP, Hexdip, HVMDIP | N-Channel | 500V | 360pF @ 25V | 1W (Ta) | 370mA (Ta) | 10V | 3 Ohm @ 220mA, 10V | 4V @ 250µA | 24nC @ 10V | ±20V | ||||
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Infineon Technologies | MOSFET N-CH 30V 12.7A 8-SOIC | TO-261-4, TO-261AA | SIPMOS® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | PG-SOT223-4 | N-Channel | 100V | 70pF @ 25V | 1.79W (Ta) | 370mA (Ta) | 2.8V, 10V | 6 Ohm @ 370mA, 10V | 1.8V @ 50µA | 2.4nC @ 10V | ±20V | |||||
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Infineon Technologies | MOSFET N-CH 100V 370MA SOT223 | TO-261-4, TO-261AA | SIPMOS® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | PG-SOT223-4 | N-Channel | 100V | 70pF @ 25V | 1.79W (Ta) | 370mA (Ta) | 2.8V, 10V | 6 Ohm @ 370mA, 10V | 1.8V @ 50µA | 2.4nC @ 10V | ±20V | |||||
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ON Semiconductor | MOSFET P-CH 60V .37A | 3-SMD, Flat Leads | - | MOSFET (Metal Oxide) | Surface Mount | 150°C (TJ) | Active | SC-70FL/MCPH3 | P-Channel | 60V | 24.1pF @ 20V | 600mW (Ta) | 370mA (Ta) | 4V, 10V | 4.2 Ohm @ 190mA, 10V | - | 0.84nC @ 10V | ±20V | |||||
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ON Semiconductor | MOSFET P-CH 60V 0.37A SB69 | TO-236-3, SC-59, SOT-23-3 | - | MOSFET (Metal Oxide) | Surface Mount | 150°C (TJ) | Active | 3-CPH | P-Channel | 60V | 24.1pF @ 20V | - | 370mA (Ta) | 4V, 10V | 4.2 Ohm @ 190mA, 10V | - | 0.84nC @ 10V | ±20V | |||||
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Vishay Siliconix | MOSFET N-CH 500V 370MA 4-DIP | 4-DIP (0.300", 7.62mm) | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | 4-DIP, Hexdip, HVMDIP | N-Channel | 500V | 360pF @ 25V | 1W (Ta) | 370mA (Ta) | 10V | 3 Ohm @ 220mA, 10V | 4V @ 250µA | 24nC @ 10V | ±20V |