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8 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
V23809-C8-C10
RFQ
Infineon Technologies MOSFET P-CH 250V 0.43A SOT223 TO-261-4, TO-261AA SIPMOS® MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete PG-SOT223-4 N-Channel 240V 95pF @ 25V 1.7W (Ta) 350mA (Ta) 2.8V, 4.5V 6 Ohm @ 350mA, 10V 1.4V @ 108µA 6.8nC @ 10V ±20V -
UAB-PN2020-HT
RFQ
Infineon Technologies MOSFET N-CH 100V 370MA SOT223 TO-261-4, TO-261AA SIPMOS® MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Discontinued at Digi-Key PG-SOT223-4 N-Channel 240V 108pF @ 25V 1.8W (Ta) 350mA (Ta) 0V, 10V 6 Ohm @ 350mA, 10V 1V @ 108µA 5.7nC @ 5V ±20V Depletion Mode
SKD04N60LV
RFQ
Infineon Technologies MOSFET N-CH 240V 350MA SOT223 TO-261-4, TO-261AA SIPMOS® MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete PG-SOT223-4 N-Channel 240V 95pF @ 25V 1.7W (Ta) 350mA (Ta) 2.8V, 4.5V 6 Ohm @ 350mA, 10V 1.4V @ 108µA 6.8nC @ 10V ±20V -
SKB04N60
RFQ
Infineon Technologies MOSFET N-CH 240V 350MA SOT223 TO-261-4, TO-261AA SIPMOS® MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete PG-SOT223-4 N-Channel 240V 108pF @ 25V 1.8W (Ta) 350mA (Ta) 0V, 10V 6 Ohm @ 350mA, 10V 1V @ 108µA 5.7nC @ 5V ±20V Depletion Mode
IPB26CN10N G
Per Unit
$0.3818
RFQ
Infineon Technologies MOSFET N-CH 240V 350MA SOT223 TO-261-4, TO-261AA SIPMOS® MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active PG-SOT223-4 N-Channel 240V 108pF @ 25V 1.8W (Ta) 350mA (Ta) 0V, 10V 6 Ohm @ 350mA, 10V 1V @ 108µA 5.7nC @ 5V ±20V Depletion Mode
IL358E
Per Unit
$0.5229
RFQ
Infineon Technologies MOSFET N-CH 240V 350MA SOT223 TO-261-4, TO-261AA SIPMOS™ MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active PG-SOT223-4 N-Channel 240V 108pF @ 25V 1.8W (Ta) 350mA (Ta) 0V, 10V 6 Ohm @ 350mA, 10V 1V @ 108µA 5.7nC @ 5V ±20V Depletion Mode
BSP89 E6327
RFQ
Infineon Technologies MOSFET N-CH 240V 350MA SOT-223 TO-261-4, TO-261AA SIPMOS® MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete PG-SOT223-4 N-Channel 240V 140pF @ 25V 1.8W (Ta) 350mA (Ta) 4.5V, 10V 6 Ohm @ 350mA, 10V 1.8V @ 108µA 6.4nC @ 10V ±20V -
BSP88E6327
RFQ
Infineon Technologies MOSFET N-CH 240V 350MA SOT223 TO-261-4, TO-261AA SIPMOS® MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete PG-SOT223-4 N-Channel 240V 95pF @ 25V 1.7W (Ta) 350mA (Ta) 2.8V, 4.5V 6 Ohm @ 350mA, 10V 1.4V @ 108µA 6.8nC @ 10V ±20V -
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