Chat with us, powered by LiveChat
Build a global manufacturer and supplier trusted trading platform.
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
UAB-M9611HTV1.1
RFQ
Infineon Technologies MOSFET N-CH 30V 13A 8-SOIC 8-SOIC (0.154", 3.90mm Width) OptiMOS™ MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Discontinued at Digi-Key 8-SO N-Channel 30V 1640pF @ 25V 2.5W (Ta) 12.7A (Ta) 4.5V, 10V 10 mOhm @ 12.7A, 10V 2V @ 55µA 26.2nC @ 5V ±20V -
SMB-403025
RFQ
Infineon Technologies MOSFET N-CH 30V 12.7A 8-SOIC 8-SOIC (0.154", 3.90mm Width) OptiMOS™ MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO N-Channel 30V 1640pF @ 25V 2.5W (Ta) 12.7A (Ta) 4.5V, 10V 10 mOhm @ 12.7A, 10V 2V @ 55µA 26.2nC @ 5V ±20V -
AO4710
RFQ
Alpha Omega Semiconductor Inc. MOSFET N-CH 30V 12.7A 8-SOIC 8-SOIC (0.154", 3.90mm Width) SRFET™ MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SOIC N-Channel 30V 2376pF @ 15V 3.1W (Ta) 12.7A (Ta) 4.5V, 10V 11.8 mOhm @ 12.7A, 10V 2.3V @ 250µA 43nC @ 10V ±12V Schottky Diode (Body)
BSO4822
RFQ
Infineon Technologies MOSFET N-CH 30V 12.7A 8-SOIC 8-SOIC (0.154", 3.90mm Width) OptiMOS™ MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO N-Channel 30V 1640pF @ 25V 2.5W (Ta) 12.7A (Ta) 4.5V, 10V 10 mOhm @ 12.7A, 10V 2V @ 55µA 26.2nC @ 5V ±20V -
Page 1 / 1