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Supplier Device Package :
Drain to Source Voltage (Vdss) :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
Drive Voltage (Max Rds On, Min Rds On) :
Gate Charge (Qg) (Max) @ Vgs :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
PT7A6525J
Per Unit
$0.3590
RFQ
Diodes Incorporated MOSFET N-CH 60V POWERDI5060-8 8-PowerTDFN - MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active PowerDI5060-8 P-Channel 30V 6807pF @ 15V 1.29W (Ta) 13.2A (Ta) 4.5V, 10V 9 mOhm @ 10A, 10V 2.1V @ 250µA 139nC @ 10V ±20V -
NDS9953
RFQ
ON Semiconductor MOSFET N-CH 40V 13.2A 8SOIC 8-SOIC (0.154", 3.90mm Width) PowerTrench® MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SOIC N-Channel 40V 2819pF @ 20V 2.5W (Ta) 13.2A (Ta) 10V 7.5 mOhm @ 13.2A, 10V 5V @ 250µA 67nC @ 10V ±20V -
FDS4770
RFQ
ON Semiconductor MOSFET N-CH 40V 13.2A 8SOIC 8-SOIC (0.154", 3.90mm Width) PowerTrench® MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SOIC N-Channel 40V 2819pF @ 20V 2.5W (Ta) 13.2A (Ta) 10V 7.5 mOhm @ 13.2A, 10V 5V @ 250µA 67nC @ 10V ±20V -
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