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Supplier Device Package :
Drain to Source Voltage (Vdss) :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
Gate Charge (Qg) (Max) @ Vgs :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
IPT012N06N
Per Unit
$0.7468
RFQ
Infineon Technologies MOSFET N-CH 700V 12.5A TO220 TO-220-3 Full Pack CoolMOS™ P7 Tube MOSFET (Metal Oxide) Through Hole -40°C ~ 150°C (TJ) Active PG-TO220 Full Pack N-Channel 700V 517pF @ 400V 26.5W (Tc) 12.5A (Tc) 10V 360 mOhm @ 3A, 10V 3.5V @ 150µA 16.4nC @ 10V ±16V -
NZX33A133
RFQ
ON Semiconductor MOSFET N-CH 500V 12.5A TO-220F TO-220-3 Full Pack QFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-220F N-Channel 500V 2300pF @ 25V 56W (Tc) 12.5A (Tc) 10V 430 mOhm @ 6.25A, 10V 5V @ 250µA 60nC @ 10V ±30V -
NZX2V4B133
RFQ
ON Semiconductor MOSFET N-CH 500V 12.5A TO-220F TO-220-3 Full Pack QFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-220F N-Channel 500V 2300pF @ 25V 56W (Tc) 12.5A (Tc) 10V 430 mOhm @ 6.25A, 10V 5V @ 250µA 60nC @ 10V ±30V -
FQPF13N50
RFQ
ON Semiconductor MOSFET N-CH 500V 12.5A TO-220F TO-220-3 Full Pack QFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-220F N-Channel 500V 2300pF @ 25V 56W (Tc) 12.5A (Tc) 10V 430 mOhm @ 6.25A, 10V 5V @ 250µA 60nC @ 10V ±30V -
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