- Operating Temperature :
- Part Status :
- FET Type :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
- Drive Voltage (Max Rds On, Min Rds On) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
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3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Vishay Siliconix | MOSFET N-CH 75V 20.5A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | TrenchFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | N-Channel | 80V | 2205pF @ 40V | 3.6W (Ta), 7.8W (Tc) | 17.3A (Tc) | 10V | 13 mOhm @ 11.7A, 10V | 4V @ 250µA | 53nC @ 10V | ±20V | - | |||||
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Vishay Siliconix | MOSFET N-CH 60V 200A POWERPAK8 | 8-SOIC (0.154", 3.90mm Width) | TrenchFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | 8-SO | P-Channel | 40V | 4250pF @ 20V | 7.14W (Tc) | 17.3A (Tc) | 4.5V, 10V | 14 mOhm @ 10.5A, 10V | 2.5V @ 250µA | 115nC @ 10V | ±20V | - | |||||
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Vishay Siliconix | MOSFET N-CH 80V 17.3A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | TrenchFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | N-Channel | 80V | 2205pF @ 40V | 3.6W (Ta), 7.8W (Tc) | 17.3A (Tc) | 10V | 13 mOhm @ 11.7A, 10V | 4V @ 250µA | 53nC @ 10V | ±20V | - |