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4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
ITS410E2 E3043
Per Unit
$1.0285
RFQ
Infineon Technologies MOSFET N-CH 120V 56A TO262-3 TO-262-3 Long Leads, I²Pak, TO-262AA OptiMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active PG-TO262-3 N-Channel 120V 3220pF @ 60V 107W (Tc) 56A (Ta) 10V 14.7 mOhm @ 56A, 10V 4V @ 61µA 49nC @ 10V ±20V -
IFX1763LDV33
Per Unit
$1.9200
RFQ
Infineon Technologies MOSFET N-CH 120V 56A TO220-3 TO-220-3 OptiMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active PG-TO-220-3 N-Channel 120V 3220pF @ 60V 107W (Tc) 56A (Ta) 10V 14.7 mOhm @ 56A, 10V 4V @ 61µA 49nC @ 10V ±20V -
ESD5V0L1B H6327
Per Unit
$0.8686
RFQ
Infineon Technologies MOSFET N-CH 120V 56A TO263-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB OptiMOS™ MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active D²PAK (TO-263AB) N-Channel 120V 3220pF @ 60V 107W (Tc) 56A (Ta) 10V 14.4 mOhm @ 56A, 10V 4V @ 61µA 49nC @ 10V ±20V -
IRF9204PBF
RFQ
Infineon Technologies MOSFET P-CH 40V 74A TO-220AB TO-220-3 HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-220AB P-Channel 40V 7676pF @ 25V 143W (Tc) 56A (Ta) 4.5V, 10V 16 mOhm @ 37A, 10V 3V @ 100µA 224nC @ 10V ±20V -
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