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- Input Capacitance (Ciss) (Max) @ Vds :
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2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | |
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Infineon Technologies | MOSFET N CH 30V 21A PQFN5X6 | 8-TQFN Exposed Pad | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PQFN (5x6) | N-Channel | 30V | 2600pF @ 10V | 3.4W (Ta), 54W (Tc) | 21A (Ta), 83A (Tc) | 4.5V, 10V | 4.9 mOhm @ 20A, 10V | 2V @ 50µA | 59nC @ 10V | ±20V | |||||
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Alpha Omega Semiconductor Inc. | MOSFET N-CH 40V 21A TO262F | TO-262-3 Full Pack, I²Pak | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | - | N-Channel | 40V | 3510pF @ 20V | 2.1W (Ta), 33.3W (Tc) | 21A (Ta), 83A (Tc) | 4.5V, 10V | 2.6 mOhm @ 20A, 10V | 2.2V @ 250µA | 72nC @ 10V | ±20V |