- Manufacture :
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- Input Capacitance (Ciss) (Max) @ Vds :
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5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | |
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Infineon Technologies | MOSFET N-CH 150V 99A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D2PAK | N-Channel | 150V | 5270pF @ 50V | 375W (Tc) | 99A (Tc) | 10V | 12.1 mOhm @ 62A, 10V | 5V @ 250µA | 120nC @ 10V | ±20V | |||||
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Infineon Technologies | MOSFET N CH 150V 99A TO262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-262 | N-Channel | 150V | 5270pF @ 50V | 375W (Tc) | 99A (Tc) | 10V | 12.1 mOhm @ 62A, 10V | 5V @ 250µA | 120nC @ 10V | ±20V | ||||
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Infineon Technologies | MOSFET N-CH 150V 99A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D2PAK | N-Channel | 150V | 5270pF @ 50V | 375W (Tc) | 99A (Tc) | 10V | 12.1 mOhm @ 62A, 10V | 5V @ 250µA | 120nC @ 10V | ±20V | ||||
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Microsemi Corporation | MOSFET N-CH 500V 99A SP4 | SP4 | - | Bulk | MOSFET (Metal Oxide) | Chassis Mount | -40°C ~ 150°C (TJ) | Obsolete | SP4 | N-Channel | 500V | 14000pF @ 25V | 781W (Tc) | 99A (Tc) | 10V | 39 mOhm @ 49.5A, 10V | 5V @ 5mA | 280nC @ 10V | ±30V | ||||
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Microsemi Corporation | MOSFET N-CH 500V 99A SP4 | SP4 | - | Bulk | MOSFET (Metal Oxide) | Chassis Mount | -40°C ~ 150°C (TJ) | Obsolete | SP4 | N-Channel | 500V | 14000pF @ 25V | 781W (Tc) | 99A (Tc) | 10V | 39 mOhm @ 49.5A, 10V | 5V @ 5mA | 280nC @ 10V | ±30V |