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Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
IPB054N06N3G
Per Unit
$1.5291
RFQ
Infineon Technologies MOSFET N-CH 40V 180A 2WDSON 3-WDSON OptiMOS™ MOSFET (Metal Oxide) Surface Mount -40°C ~ 150°C (TJ) Active MG-WDSON-2, CanPAK M™ N-Channel 40V 12000pF @ 20V 2.8W (Ta), 89W (Tc) 36A (Ta), 180A (Tc) 10V 1.5 mOhm @ 30A, 10V 4V @ 250µA 142nC @ 10V ±20V -
BTS4252D
Per Unit
$0.9831
RFQ
Infineon Technologies MOSFET N-CH 40V 180A 2WDSON 3-WDSON OptiMOS™ MOSFET (Metal Oxide) Surface Mount -40°C ~ 150°C (TJ) Active MG-WDSON-2, CanPAK M™ N-Channel 40V 16900pF @ 20V 2.8W (Ta), 89W (Tc) 36A (Ta), 180A (Tc) 4.5V, 10V 1.4 mOhm @ 30A, 10V 2V @ 250µA 196nC @ 10V ±20V -
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