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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
UAB-X857042-003
RFQ
Infineon Technologies MOSFET N-CH 60V 1.8A SOT223 TO-261-4, TO-261AA SIPMOS® MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete PG-SOT223-4 P-Channel 60V 160pF @ 25V 1.8W (Ta) 1.17A (Ta) 4.5V, 10V 800 mOhm @ 1.17A, 10V 2V @ 160µA 7.8nC @ 10V ±20V -
SKB10N60 E3045A
RFQ
Infineon Technologies MOSFET P-CH 60V 1.17A SOT-223 TO-261-4, TO-261AA SIPMOS® MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete PG-SOT223-4 P-Channel 60V 160pF @ 25V 1.8W (Ta) 1.17A (Ta) 4.5V, 10V 800 mOhm @ 1.17A, 10V 2V @ 160µA 7.8nC @ 10V ±20V -
IPB25N06S3-22
Per Unit
$0.3656
RFQ
Infineon Technologies MOSFET P-CH 60V 1.17A SOT-223 TO-261-4, TO-261AA SIPMOS® MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active PG-SOT223-4 P-Channel 60V 160pF @ 25V 1.8W (Ta) 1.17A (Ta) 4.5V, 10V 800 mOhm @ 1.17A, 10V 2V @ 160µA 7.8nC @ 10V ±20V -
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