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Supplier Device Package :
Drain to Source Voltage (Vdss) :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
Vgs(th) (Max) @ Id :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Vgs (Max)
STS3420
RFQ
Diodes Incorporated MOSFET P-CH 100V 0.14A TO92-3 TO-236-3, SC-59, SOT-23-3 - MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete SOT-23-3 P-Channel 100V 50pF @ 25V 330mW (Ta) 75mA (Ta) 10V 20 Ohm @ 150mA, 10V 3.5V @ 1mA ±20V
STM6930A.
RFQ
Diodes Incorporated MOSFET P-CH 450V 0.045A TO92-3 TO-261-4, TO-261AA - MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete SOT-223 P-Channel 450V 120pF @ 25V 2W (Ta) 75mA (Ta) 10V 150 Ohm @ 50mA, 10V 4.5V @ 1mA ±20V
S10AH
Per Unit
$0.3231
RFQ
Diodes Incorporated MOSFET P-CH 20V 10A 8-SOIC TO-236-3, SC-59, SOT-23-3 - MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active SOT-23-3 P-Channel 100V 50pF @ 25V 330mW (Ta) 75mA (Ta) 10V 20 Ohm @ 150mA, 10V 3.5V @ 1mA ±20V
PI504BA
Per Unit
$0.4129
RFQ
Diodes Incorporated MOSFET N-CH 250V 230MA SOT-23-6 TO-261-4, TO-261AA - MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active SOT-223 P-Channel 450V 120pF @ 25V 2W (Ta) 75mA (Ta) 10V 150 Ohm @ 50mA, 10V 4.5V @ 1mA ±20V
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