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Power Dissipation (Max) :
Gate Charge (Qg) (Max) @ Vgs :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
SGM8091XN5/TR
Per Unit
$0.6198
RFQ
Diodes Incorporated MOSFET N-CH 40V 80A POWERDI5060 8-PowerTDFN Automotive, AEC-Q101 MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active PowerDI5060-8 N-Channel 30V 2370pF @ 15V 136W (Tc) 22A (Ta), 145A (Tc) 4.5V, 10V 3.8 mOhm @ 20A, 10V 3V @ 250µA 43.7nC @ 15V +20V, -16V -
SGM7227YUWQ10/TR
RFQ
Diodes Incorporated MOSFET P-CH 20V 2.5A 3-DFN 8-PowerTDFN Automotive, AEC-Q101 MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active PowerDI5060-8 N-Channel 30V 2370pF @ 15V 3.2W (Ta), 136W (Tc) 22A (Ta), 145A (Tc) 4.5V, 10V 3.8 mOhm @ 20A, 10V 3V @ 250µA 43.7nC @ 10V +20V, -16V -
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