- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Vishay Siliconix | MOSFET P-CH 150V 37A POWERPAKSO | TrenchFET® Gen IV | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PowerPAK® SO-8 | N-Channel | 60V | 3250pF @ 30V | 69.4W (Tc) | 60A (Tc) | 7.5V, 10V | 2.8 mOhm @ 15A, 10V | 3.6V @ 250µA | 64nC @ 10V | ±20V | - | |||||
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Vishay Siliconix | MOSFET N-CHAN 80-V POWERPAK 1212 | ThunderFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PowerPAK® SO-8 | N-Channel | 125V | 1410pF @ 75V | 104W (Tc) | 60A (Tc) | 7.5V, 10V | 11.5 mOhm @ 20A, 10V | 4.5V @ 250µA | 38nC @ 10V | ±20V | - | |||||
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Vishay Siliconix | MOSFET N-CH 20V 60A POLARPAK | TrenchFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PowerPAK® SO-8 | N-Channel | 100V | 2870pF @ 50V | 6.25W (Ta), 104W (Tc) | 60A (Tc) | 7.5V, 10V | 7.8 mOhm @ 20A, 10V | 3.5V @ 250µA | 72nC @ 10V | ±20V | - |