- Package / Case :
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- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
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7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | |
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Vishay Siliconix | MOSFET P-CH 30V 4.5A SC-70-6 | TO-236-3, SC-59, SOT-23-3 | TrenchFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | SOT-23-3 (TO-236) | N-Channel | 40V | 540pF @ 20V | 750mW (Ta) | 3A (Ta) | 4.5V, 10V | 45 mOhm @ 3.9A, 10V | 3V @ 250µA | 15nC @ 10V | ±20V | |||||
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Vishay Siliconix | MOSFET P-CH 20V 8A 6-TSOP | TO-236-3, SC-59, SOT-23-3 | TrenchFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | SOT-23-3 (TO-236) | N-Channel | 40V | 540pF @ 20V | 750mW (Ta) | 3A (Ta) | 4.5V, 10V | 45 mOhm @ 3.9A, 10V | 3V @ 250µA | 15nC @ 10V | ±20V | |||||
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Infineon Technologies | MOSFET N-CH 55V 2.8A SOT223 | TO-261-4, TO-261AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Discontinued at Digi-Key | SOT-223 | N-Channel | 30V | 530pF @ 25V | 1W (Ta) | 3.9A (Ta) | 4V, 10V | 45 mOhm @ 3.9A, 10V | 2.4V @ 250µA | 14nC @ 5V | ±16V | ||||
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Infineon Technologies | MOSFET N-CH 30V 3.9A SOT223 | TO-261-4, TO-261AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | SOT-223 | N-Channel | 30V | 530pF @ 25V | 1W (Ta) | 3.9A (Ta) | 4V, 10V | 45 mOhm @ 3.9A, 10V | 2.4V @ 250µA | 14nC @ 5V | ±16V | ||||
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Infineon Technologies | MOSFET N-CH 30V 3.9A SOT223 | TO-261-4, TO-261AA | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | SOT-223 | N-Channel | 30V | 530pF @ 25V | 1W (Ta) | 3.9A (Ta) | 4V, 10V | 45 mOhm @ 3.9A, 10V | 2.4V @ 250µA | 14nC @ 5V | ±16V | |||||
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Infineon Technologies | MOSFET N-CH 30V 3.9A SOT223 | TO-261-4, TO-261AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | SOT-223 | N-Channel | 30V | 530pF @ 25V | 1W (Ta) | 3.9A (Ta) | 4V, 10V | 45 mOhm @ 3.9A, 10V | 2.4V @ 250µA | 14nC @ 5V | ±16V | ||||
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Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 40V 3.9A SOT23 | TO-236-3, SC-59, SOT-23-3 | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | SOT-23 | N-Channel | 40V | 540pF @ 20V | 1.25W (Ta) | 3.9A (Ta) | 4.5V, 10V | 45 mOhm @ 3.9A, 10V | 3V @ 250µA | 10nC @ 10V | ±20V |