- Manufacture :
- Mounting Type :
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- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
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9 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | |
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Infineon Technologies | MOSFET N-CH TO220-3 | TO-220-3 | OptiMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | PG-TO-220-3 | N-Channel | 80V | 12100pF @ 40V | 300W (Tc) | 120A (Tc) | 6V, 10V | 2.3 mOhm @ 100A, 10V | 3.8V @ 208µA | 166nC @ 10V | ±20V | ||||
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Infineon Technologies | MOSFET N-CH 40V 120A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D2PAK | N-Channel | 40V | 5193pF @ 25V | 163W (Tc) | 120A (Tc) | 10V | 2.3 mOhm @ 100A, 10V | 3.9V @ 100µA | 161nC @ 10V | ±20V | |||||
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Infineon Technologies | MOSFET N-CH 40V 120A TO262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-262 | N-Channel | 40V | 5193pF @ 25V | 163W (Tc) | 120A (Tc) | 10V | 2.3 mOhm @ 100A, 10V | 3.9V @ 100µA | 161nC @ 10V | ±20V | ||||
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Infineon Technologies | MOSFET N-CH 100V 120A TO220-3 | TO-220-3 | OptiMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | PG-TO-220-3 | N-Channel | 100V | 15600pF @ 50V | 375W (Tc) | 120A (Tc) | 6V, 10V | 2.3 mOhm @ 100A, 10V | 3.8V @ 270µA | 210nC @ 10V | ±20V | ||||
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ON Semiconductor | MOSFET N-CH 100V 222A TO220F | TO-220-3 Full Pack | PowerTrench® | - | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220F | N-Channel | 100V | 11180pF @ 50V | 45W (Tc) | 222A (Tc) | 10V | 2.3 mOhm @ 100A, 10V | 4V @ 700µA | 152nC @ 10V | ±20V | ||||
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ON Semiconductor | MOSFET N-CH 100V 222A TO220-3 | TO-220-3 | PowerTrench® | - | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220-3 | N-Channel | 100V | 11180pF @ 50V | 214W (Tc) | 222A (Tc) | 10V | 2.3 mOhm @ 100A, 10V | 4V @ 700µA | 152nC @ 10V | ±20V | ||||
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Infineon Technologies | MOSFET N-CH 75V 120A TO220 | TO-220-3 | OptiMOS™ 3 | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | PG-TO220-3 | N-Channel | 75V | 14400pF @ 37.5V | 300W (Tc) | 120A (Tc) | 10V | 2.3 mOhm @ 100A, 10V | 3.8V @ 273µA | 206nC @ 10V | ±20V | ||||
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ON Semiconductor | MOSFET N-CH 100V 222A TO220F | TO-220-3 Full Pack | PowerTrench® | - | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220F | N-Channel | 100V | 11180pF @ 50V | 45W (Tc) | 222A (Tc) | 10V | 2.3 mOhm @ 100A, 10V | 4V @ 700µA | 152nC @ 10V | ±20V | ||||
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ON Semiconductor | MOSFET N-CH 100V 222A TO220-3 | TO-220-3 | PowerTrench® | - | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220-3 | N-Channel | 100V | 11180pF @ 50V | 214W (Tc) | 222A (Tc) | 10V | 2.3 mOhm @ 100A, 10V | 4V @ 700µA | 152nC @ 10V | ±20V |