- Manufacture :
- Series :
- Part Status :
- Supplier Device Package :
- Input Capacitance (Ciss) (Max) @ Vds :
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9 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | |
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Vishay Siliconix | MOSFET N-CH 500V 23A TO-247AC | TO-247-3 | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | TO-247-3 | N-Channel | 500V | 4200pF @ 25V | - | 20A (Tc) | - | 270 mOhm @ 12A, 10V | 4V @ 250µA | 210nC @ 10V | - | ||||
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Vishay Siliconix | MOSFET N-CH 500V 14A TO-247AC | TO-247-3 | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | TO-247-3 | N-Channel | 500V | 3100pF @ 25V | 280W (Tc) | 20A (Tc) | 10V | 270 mOhm @ 12A, 10V | 4V @ 250µA | 105nC @ 10V | ±30V | ||||
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Vishay Siliconix | MOSFET N-CH 600V 27A TO-247AC | TO-247-3 | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-247-3 | N-Channel | 500V | 3600pF @ 25V | 280W (Tc) | 20A (Tc) | 10V | 270 mOhm @ 12A, 10V | 4V @ 250µA | 120nC @ 10V | ±30V | ||||
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Vishay Siliconix | MOSFET N-CH 600V 21A D2PAK | TO-247-3 | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-247-3 | N-Channel | 500V | 3600pF @ 25V | 280W (Tc) | 20A (Tc) | 10V | 270 mOhm @ 12A, 10V | 4V @ 250µA | 120nC @ 10V | ±30V | ||||
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Vishay Siliconix | MOSFET N-CH 500V 20A TO-247AC | TO-247-3 | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-247-3 | N-Channel | 500V | 3100pF @ 25V | 280W (Tc) | 20A (Tc) | 10V | 270 mOhm @ 12A, 10V | 4V @ 250µA | 105nC @ 10V | ±30V | ||||
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Vishay Siliconix | MOSFET N-CH 200V 9.9A TO220FP | TO-247-3 | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-247-3 | N-Channel | 500V | 4200pF @ 25V | 280W (Tc) | 20A (Tc) | 10V | 270 mOhm @ 12A, 10V | 4V @ 250µA | 210nC @ 10V | ±20V | ||||
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Infineon Technologies | MOSFET N-CH 500V 19A TO-254AA | TO-254-3, TO-254AA (Straight Leads) | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | - | Obsolete | TO-254AA | N-Channel | 500V | 4300pF @ 25V | 250W (Tc) | 19A (Tc) | 10V | 270 mOhm @ 12A, 10V | 4V @ 250µA | 190nC @ 10V | ±20V | ||||
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Infineon Technologies | MOSFET N-CH 500V 19A TO-254AA | TO-254-3, TO-254AA (Straight Leads) | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | - | Obsolete | TO-254AA | N-Channel | 500V | 4300pF @ 25V | 250W (Tc) | 19A (Tc) | 10V | 270 mOhm @ 12A, 10V | 4V @ 250µA | 190nC @ 10V | ±20V | ||||
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Vishay Siliconix | MOSFET N-CH 500V 20A TO-247AC | TO-247-3 | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-247-3 | N-Channel | 500V | 3600pF @ 25V | 280W (Tc) | 20A (Tc) | 10V | 270 mOhm @ 12A, 10V | 4V @ 250µA | 120nC @ 10V | ±30V |