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Supplier Device Package :
Power Dissipation (Max) :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
STP8NS25FP
RFQ
STMicroelectronics MOSFET N-CH 250V 8A TO-220FP TO-220-3 Full Pack MESH OVERLAY™ Tube MOSFET (Metal Oxide) Through Hole 150°C (TJ) Obsolete TO-220FP N-Channel 250V 770pF @ 25V 30W (Tc) 8A (Tc) 10V 450 mOhm @ 4A, 10V 4V @ 250µA 51.8nC @ 10V ±20V -
STP8NS25
RFQ
STMicroelectronics MOSFET N-CH 250V 8A TO-220 TO-220-3 MESH OVERLAY™ Tube MOSFET (Metal Oxide) Through Hole 150°C (TJ) Obsolete TO-220AB N-Channel 250V 770pF @ 25V 80W (Tc) 8A (Tc) 10V 450 mOhm @ 4A, 10V 4V @ 250µA 51.8nC @ 10V ±20V -
IRF634
RFQ
STMicroelectronics MOSFET N-CH 250V 8A TO-220 TO-220-3 MESH OVERLAY™ Tube MOSFET (Metal Oxide) Through Hole 150°C (TJ) Obsolete TO-220AB N-Channel 250V 770pF @ 25V 80W (Tc) 8A (Tc) 10V 450 mOhm @ 4A, 10V 4V @ 250µA 51.8nC @ 10V ±20V -
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