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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
STU10NM65N
RFQ
STMicroelectronics MOSFET N-CH 650V 9A IPAK TO-251-3 Short Leads, IPak, TO-251AA MDmesh™ II Tube MOSFET (Metal Oxide) Through Hole 150°C (TJ) Obsolete I-PAK N-Channel 650V 850pF @ 50V 90W (Tc) 9A (Tc) 10V 480 mOhm @ 4.5A, 10V 4V @ 250µA 25nC @ 10V ±25V -
STP10NM65N
RFQ
STMicroelectronics MOSFET N-CH 650V 9A TO-220 TO-220-3 MDmesh™ II Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-220AB N-Channel 650V 850pF @ 50V 90W (Tc) 9A (Tc) 10V 480 mOhm @ 4.5A, 10V 4V @ 250µA 25nC @ 10V ±25V -
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