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Supplier Device Package :
Drain to Source Voltage (Vdss) :
Input Capacitance (Ciss) (Max) @ Vds :
Gate Charge (Qg) (Max) @ Vgs :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
STI200N6F3
RFQ
STMicroelectronics MOSFET N-CH 60V 120A I2PAK TO-262-3 Long Leads, I²Pak, TO-262AA STripFET™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete I2PAK N-Channel 60V 6265pF @ 25V 330W (Tc) 120A (Tc) 10V 3.8 mOhm @ 60A, 10V 4V @ 250µA 101nC @ 10V ±20V -
STP180N55F3
RFQ
STMicroelectronics MOSFET N-CH 55V 120A TO-220 TO-220-3 STripFET™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-220AB N-Channel 55V 6800pF @ 25V 330W (Tc) 120A (Tc) 10V 3.8 mOhm @ 60A, 10V 4V @ 250µA 100nC @ 10V ±20V -
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