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3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | |
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Vishay Siliconix | MOSFET P-CH 200V 1.8A TO-220AB | 4-DIP (0.300", 7.62mm) | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | 4-DIP, Hexdip, HVMDIP | N-Channel | 200V | 260pF @ 25V | 1W (Ta) | 800mA (Ta) | 10V | 800 mOhm @ 480mA, 10V | 4V @ 250µA | 14nC @ 10V | ±20V | ||||
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Vishay Siliconix | MOSFET N-CH 600V 2.2A TO-220AB | 4-DIP (0.300", 7.62mm) | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | 4-DIP, Hexdip, HVMDIP | N-Channel | 200V | 260pF @ 25V | 1W (Ta) | 800mA (Ta) | 10V | 800 mOhm @ 480mA, 10V | 4V @ 250µA | 14nC @ 10V | ±20V | ||||
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Vishay Siliconix | MOSFET N-CH 200V 800MA 4-DIP | 4-DIP (0.300", 7.62mm) | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | 4-DIP, Hexdip, HVMDIP | N-Channel | 200V | 260pF @ 25V | 1W (Ta) | 800mA (Ta) | 10V | 800 mOhm @ 480mA, 10V | 4V @ 250µA | 14nC @ 10V | ±20V |