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4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | |
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Vishay Siliconix | MOSFET N-CH 500V 4.5A TO220FP | TO-220-3 Full Pack, Isolated Tab | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-220-3 | P-Channel | 100V | 860pF @ 25V | 42W (Tc) | 7.7A (Tc) | 10V | 300 mOhm @ 4.6A, 10V | 4V @ 250µA | 38nC @ 10V | ±20V | ||||
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Vishay Siliconix | MOSFET N-CH 200V 18A D2PAK | TO-220-3 Full Pack, Isolated Tab | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220-3 | P-Channel | 100V | 860pF @ 25V | 42W (Tc) | 7.7A (Tc) | 10V | 300 mOhm @ 4.6A, 10V | 4V @ 250µA | 38nC @ 10V | ±20V | ||||
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Infineon Technologies | MOSFET P-CH 100V 7.7A TO-220FP | TO-220-3 Full Pack | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | - | Obsolete | TO-220AB Full-Pak | P-Channel | 100V | 860pF @ 25V | - | 7.7A (Ta) | - | 300 mOhm @ 4.6A, 10V | 4V @ 250µA | 38nC @ 10V | - | ||||
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Vishay Siliconix | MOSFET P-CH 100V 7.7A TO220FP | TO-220-3 Full Pack, Isolated Tab | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-220-3 | P-Channel | 100V | 860pF @ 25V | 42W (Tc) | 7.7A (Tc) | 10V | 300 mOhm @ 4.6A, 10V | 4V @ 250µA | 38nC @ 10V | ±20V |