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10 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Infineon Technologies | MOSFET N-CH 100V 36A TO-262 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | - | Discontinued at Digi-Key | D2PAK | N-Channel | 55V | 1696pF @ 25V | 3.8W (Ta), 107W (Tc) | 53A (Tc) | 10V | 16.5 mOhm @ 28A, 10V | 4V @ 250µA | 72nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 55V 53A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | N-Channel | 55V | 1696pF @ 25V | 3.8W (Ta), 107W (Tc) | 53A (Tc) | 10V | 16.5 mOhm @ 28A, 10V | 4V @ 250µA | 72nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 55V 53A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | N-Channel | 55V | 1696pF @ 25V | 3.8W (Ta), 107W (Tc) | 53A (Tc) | 10V | 16.5 mOhm @ 28A, 10V | 4V @ 250µA | 72nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 55V 53A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | N-Channel | 55V | 1696pF @ 25V | 3.8W (Ta), 107W (Tc) | 53A (Tc) | 10V | 16.5 mOhm @ 28A, 10V | 4V @ 250µA | 72nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 55V 53A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Last Time Buy | TO-262 | N-Channel | 55V | 1696pF @ 25V | 3.8W (Ta), 107W (Tc) | 39A (Tc) | 10V | 16.5 mOhm @ 28A, 10V | 4V @ 250µA | 72nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 55V 53A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | N-Channel | 55V | 1696pF @ 25V | 107W (Tc) | 53A (Tc) | 10V | 16.5 mOhm @ 28A, 10V | 4V @ 250µA | 72nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 55V 53A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D2PAK | N-Channel | 55V | 1696pF @ 25V | 3.8W (Ta), 107W (Tc) | 53A (Tc) | 10V | 16.5 mOhm @ 28A, 10V | 4V @ 250µA | 72nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 55V 53A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | - | Discontinued at Digi-Key | D2PAK | N-Channel | 55V | 1696pF @ 25V | 3.8W (Ta), 107W (Tc) | 53A (Tc) | 10V | 16.5 mOhm @ 28A, 10V | 4V @ 250µA | 72nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 55V 53A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | N-Channel | 55V | 1696pF @ 25V | 3.8W (Ta), 107W (Tc) | 53A (Tc) | 10V | 16.5 mOhm @ 28A, 10V | 4V @ 250µA | 72nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 55V 53A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | N-Channel | 55V | 1696pF @ 25V | 3.8W (Ta), 107W (Tc) | 53A (Tc) | 10V | 16.5 mOhm @ 28A, 10V | 4V @ 250µA | 72nC @ 10V | ±20V | - |