Chat with us, powered by LiveChat
Build a global manufacturer and supplier trusted trading platform.
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
SAKTC1724N192
RFQ
Infineon Technologies MOSFET P-CH 20V 4A 6-TSOP SOT-23-6 Thin, TSOT-23-6 HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete Micro6™(TSOP-6) P-Channel 20V 594pF @ 15V 2W (Ta) 4A (Ta) 2.5V, 4.5V 86 mOhm @ 4A, 4.5V 1.2V @ 250µA 11.4nC @ 4.5V ±20V -
IRF5806
RFQ
Infineon Technologies MOSFET P-CH 20V 4A 6-TSOP SOT-23-6 Thin, TSOT-23-6 HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete Micro6™(TSOP-6) P-Channel 20V 594pF @ 15V 2W (Ta) 4A (Ta) 2.5V, 4.5V 86 mOhm @ 4A, 4.5V 1.2V @ 250µA 11.4nC @ 4.5V ±20V -
Page 1 / 1