- Mounting Type :
- Part Status :
- Supplier Device Package :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Drive Voltage (Max Rds On, Min Rds On) :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
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12 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Infineon Technologies | MOSFET N-CH 20V 77A TO-262 | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-220AB | N-Channel | 20V | 5090pF @ 10V | 210W (Tc) | 180A (Tc) | 4.5V, 10V | 4 mOhm @ 90A, 10V | 3V @ 250µA | 79nC @ 4.5V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 100V 75A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | N-Channel | 20V | 5090pF @ 10V | 210W (Tc) | 180A (Tc) | 4.5V, 10V | 4 mOhm @ 90A, 10V | 3V @ 250µA | 79nC @ 4.5V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 20V 180A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | N-Channel | 20V | 5090pF @ 10V | 210W (Tc) | 180A (Tc) | 4.5V, 10V | 4 mOhm @ 90A, 10V | 3V @ 250µA | 79nC @ 4.5V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 20V 180A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-220AB | N-Channel | 20V | 5090pF @ 10V | 210W (Tc) | 180A (Tc) | 4.5V, 10V | 4 mOhm @ 90A, 10V | 3V @ 250µA | 79nC @ 4.5V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 60V 90A TO263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Automotive, AEC-Q101, OptiMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D²PAK (TO-263AB) | N-Channel | 60V | 10400pF @ 25V | 150W (Tc) | 90A (Tc) | 10V | 4 mOhm @ 90A, 10V | 4V @ 90µA | 128nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 60V 90A TO220-3 | TO-220-3 | OptiMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | PG-TO-220-3 | N-Channel | 60V | 11000pF @ 30V | 188W (Tc) | 90A (Tc) | 10V | 4 mOhm @ 90A, 10V | 4V @ 90µA | 98nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 60V 90A | TO-262-3 Long Leads, I²Pak, TO-262AA | OptiMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | PG-TO262-3 | N-Channel | 60V | 11000pF @ 30V | 188W (Tc) | 90A (Tc) | 10V | 4 mOhm @ 90A, 10V | 4V @ 90µA | 98nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 20V 180A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | N-Channel | 20V | 5090pF @ 10V | 210W (Tc) | 180A (Tc) | 4.5V, 10V | 4 mOhm @ 90A, 10V | 3V @ 250µA | 79nC @ 4.5V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 20V 180A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-220AB | N-Channel | 20V | 5090pF @ 10V | 210W (Tc) | 180A (Tc) | 4.5V, 10V | 4 mOhm @ 90A, 10V | 3V @ 250µA | 79nC @ 4.5V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 20V 180A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | N-Channel | 20V | 5090pF @ 10V | 210W (Tc) | 180A (Tc) | 4.5V, 10V | 4 mOhm @ 90A, 10V | 3V @ 250µA | 79nC @ 4.5V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 20V 180A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | N-Channel | 20V | 5090pF @ 10V | 210W (Tc) | 180A (Tc) | 4.5V, 10V | 4 mOhm @ 90A, 10V | 3V @ 250µA | 79nC @ 4.5V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 20V 180A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-220AB | N-Channel | 20V | 5090pF @ 10V | 210W (Tc) | 180A (Tc) | 4.5V, 10V | 4 mOhm @ 90A, 10V | 3V @ 250µA | 79nC @ 4.5V | ±20V | - |