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4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
SGP30N60
RFQ
Infineon Technologies MOSFET N-CH 150V 0.9A 6-TSOP SOT-23-6 Thin, TSOT-23-6 HEXFET® Cut Tape (CT) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete Micro6™(TSOP-6) N-Channel 150V 88pF @ 25V 2W (Ta) 900mA (Ta) 10V 1.2 Ohm @ 540mA, 10V 5.5V @ 250µA 6.8nC @ 10V ±30V -
SAK-TC1724N-192F80HL AB
RFQ
Infineon Technologies MOSFET N-CH 150V 900MA 6TSOP SOT-23-6 Thin, TSOT-23-6 HEXFET® Tube MOSFET (Metal Oxide) Surface Mount - Obsolete Micro6™(TSOP-6) N-Channel 150V 88pF @ 25V 2W (Ta) 900mA (Ta) 10V 1.2 Ohm @ 540mA, 10V 5.5V @ 250µA 6.8nC @ 10V ±30V -
BUZ40B
Per Unit
$0.2227
RFQ
Infineon Technologies MOSFET N-CH 150V 0.9A 6-TSOP SOT-23-6 Thin, TSOT-23-6 HEXFET® MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active Micro6™(TSOP-6) N-Channel 150V 88pF @ 25V 2W (Ta) 900mA (Ta) 10V 1.2 Ohm @ 540mA, 10V 5.5V @ 250µA 6.8nC @ 10V ±30V -
IRF5802TR
RFQ
Infineon Technologies MOSFET N-CH 150V 0.9A 6-TSOP SOT-23-6 Thin, TSOT-23-6 HEXFET® Cut Tape (CT) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete Micro6™(TSOP-6) N-Channel 150V 88pF @ 25V 2W (Ta) 900mA (Ta) 10V 1.2 Ohm @ 540mA, 10V 5.5V @ 250µA 6.8nC @ 10V ±30V -
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