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Packaging :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
TDA5235HT
RFQ
Infineon Technologies MOSFET N-CH 30V 32A DIRECTFET 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO N-Channel 12V 2550pF @ 6V 2.5W (Ta) 15A (Ta) 2.8V, 4.5V 8 mOhm @ 15A, 4.5V 1.9V @ 250µA 40nC @ 4.5V ±12V -
SGW10N60 G10N60
RFQ
Infineon Technologies MOSFET N-CH 12V 15A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO N-Channel 12V 2550pF @ 6V 2.5W (Ta) 15A (Ta) 2.8V, 4.5V 8 mOhm @ 15A, 4.5V 1.9V @ 250µA 40nC @ 4.5V ±12V -
GDSD18-1
Per Unit
$0.3889
RFQ
Infineon Technologies MOSFET N-CH 12V 15A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active 8-SO N-Channel 12V 2550pF @ 6V 2.5W (Ta) 15A (Ta) 2.8V, 4.5V 8 mOhm @ 15A, 4.5V 1.9V @ 250µA 40nC @ 4.5V ±12V -
IRF7476
RFQ
Infineon Technologies MOSFET N-CH 12V 15A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO N-Channel 12V 2550pF @ 6V 2.5W (Ta) 15A (Ta) 2.8V, 4.5V 8 mOhm @ 15A, 4.5V 1.9V @ 250µA 40nC @ 4.5V ±12V -
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