- Mounting Type :
- Operating Temperature :
- Part Status :
- Supplier Device Package :
- FET Type :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Drive Voltage (Max Rds On, Min Rds On) :
- Vgs(th) (Max) @ Id :
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13 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Vishay Siliconix | MOSFET N-CH 30V 7.5A 8-SOIC | TO-252-3, DPak (2 Leads + Tab), SC-63 | TrenchFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | TO-252, (D-Pak) | P-Channel | 30V | 6000pF @ 25V | 4W (Ta), 70W (Tc) | - | 4.5V, 10V | 10 mOhm @ 15A, 10V | 3V @ 250µA | 150nC @ 10V | ±20V | - | |||||
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Vishay Siliconix | MOSFET N-CH 100V 3.4A 1212-8 | PowerPAK® SO-8 | TrenchFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PowerPAK® SO-8 | P-Channel | 40V | 4150pF @ 20V | 5W (Ta), 39W (Tc) | 46A (Tc) | 4.5V, 10V | 10 mOhm @ 15A, 10V | 2.3V @ 250µA | 144nC @ 10V | ±20V | - | |||||
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Vishay Siliconix | MOSFET N-CH 100V 5.6A D2PAK | 8-SOIC (0.154", 3.90mm Width) | TrenchFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SO | N-Channel | 100V | 2410pF @ 50V | 3.5W (Ta), 7.8W (Tc) | 19.7A (Tc) | 6V, 10V | 10 mOhm @ 15A, 10V | 3.3V @ 250µA | 69nC @ 10V | ±20V | - | |||||
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Vishay Siliconix | MOSFET N-CH 200V 35.8A TO252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 | Automotive, AEC-Q101, TrenchFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | TO-252, (D-Pak) | P-Channel | 30V | 3495pF @ 15V | 71W (Tc) | 50A (Tc) | 4.5V, 10V | 10 mOhm @ 15A, 10V | 2.5V @ 250µA | 83nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 30V 43A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Discontinued at Digi-Key | D-Pak | N-Channel | 30V | 1030pF @ 15V | 75W (Tc) | 65A (Tc) | 4.5V, 10V | 10 mOhm @ 15A, 10V | 1V @ 250µA | 14nC @ 4.5V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 55V 26A I-PAK | TO-251-3 Short Leads, IPak, TO-251AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | I-PAK | N-Channel | 30V | 1030pF @ 15V | 75W (Tc) | 65A (Tc) | 4.5V, 10V | 10 mOhm @ 15A, 10V | 1V @ 250µA | 14nC @ 4.5V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 30V 65A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D-Pak | N-Channel | 30V | 1030pF @ 15V | 75W (Tc) | 65A (Tc) | 4.5V, 10V | 10 mOhm @ 15A, 10V | 1V @ 250µA | 14nC @ 4.5V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 30V 65A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D-Pak | N-Channel | 30V | 1030pF @ 15V | 75W (Tc) | 65A (Tc) | 4.5V, 10V | 10 mOhm @ 15A, 10V | 1V @ 250µA | 14nC @ 4.5V | ±20V | - | |||||
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ON Semiconductor | MOSFET N-CH 35V 15A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | PowerTrench® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | D-PAK (TO-252) | N-Channel | 35V | 1400pF @ 20V | 3.8W (Ta), 55W (Tc) | 15A (Ta), 59A (Tc) | 4.5V, 10V | 10 mOhm @ 15A, 10V | 3V @ 250µA | 36nC @ 10V | ±20V | - | |||||
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Vishay Siliconix | MOSFET P-CH 30V TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TrenchFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | TO-252, (D-Pak) | P-Channel | 30V | 6000pF @ 25V | 4W (Ta), 70W (Tc) | - | 4.5V, 10V | 10 mOhm @ 15A, 10V | 3V @ 250µA | 150nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 30V 65A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D-Pak | N-Channel | 30V | 1030pF @ 15V | 75W (Tc) | 65A (Tc) | 4.5V, 10V | 10 mOhm @ 15A, 10V | 1V @ 250µA | 14nC @ 4.5V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 30V 65A I-PAK | TO-251-3 Short Leads, IPak, TO-251AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | I-PAK | N-Channel | 30V | 1030pF @ 15V | 75W (Tc) | 65A (Tc) | 4.5V, 10V | 10 mOhm @ 15A, 10V | 1V @ 250µA | 14nC @ 4.5V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 30V 65A I-PAK | TO-251-3 Short Leads, IPak, TO-251AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | I-PAK | N-Channel | 30V | 1030pF @ 15V | 75W (Tc) | 65A (Tc) | 4.5V, 10V | 10 mOhm @ 15A, 10V | 1V @ 250µA | 14nC @ 4.5V | ±20V | - |