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8 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
VC6510-PBC01
RFQ
Infineon Technologies MOSFET N-CH 20V 31A DIRECTFET DirectFET™ Isometric MT HEXFET® MOSFET (Metal Oxide) Surface Mount -40°C ~ 150°C (TJ) Obsolete DIRECTFET™ MT N-Channel 20V 6290pF @ 10V 1.8W (Ta), 89W (Tc) 31A (Ta), 150A (Tc) 4.5V, 10V 2 mOhm @ 31A, 10V 2.45V @ 250µA 69nC @ 4.5V ±20V -
VC639543122
RFQ
Infineon Technologies MOSFET N-CH 600V 7.3A DPAK DirectFET™ Isometric MT HEXFET® MOSFET (Metal Oxide) Surface Mount -40°C ~ 150°C (TJ) Obsolete DIRECTFET™ MT N-Channel 20V 6290pF @ 10V 1.8W (Ta), 89W (Tc) 31A (Ta), 150A (Tc) 4.5V, 10V 2 mOhm @ 31A, 10V 2.45V @ 250µA 69nC @ 4.5V ±20V -
SPU23N05
RFQ
Infineon Technologies MOSFET N-CH 100V 36A D2PAK DirectFET™ Isometric MT HEXFET® MOSFET (Metal Oxide) Surface Mount -40°C ~ 150°C (TJ) Obsolete DIRECTFET™ MT N-Channel 20V 6290pF @ 10V 1.8W (Ta), 89W (Tc) 31A (Ta), 150A (Tc) 4.5V, 10V 2 mOhm @ 31A, 10V 2.45V @ 250µA 69nC @ 4.5V ±20V -
SPDA2636A-002A
RFQ
Infineon Technologies MOSFET N-CH 30V 87A D2PAK DirectFET™ Isometric MT HEXFET® MOSFET (Metal Oxide) Surface Mount -40°C ~ 150°C (TJ) Obsolete DIRECTFET™ MT N-Channel 20V 6290pF @ 10V 1.8W (Ta), 89W (Tc) 31A (Ta), 150A (Tc) 4.5V, 10V 2 mOhm @ 31A, 10V 2.45V @ 250µA 69nC @ 4.5V ±20V -
IRF6609TRPBF
RFQ
Infineon Technologies MOSFET N-CH 20V 31A DIRECTFET DirectFET™ Isometric MT HEXFET® MOSFET (Metal Oxide) Surface Mount -40°C ~ 150°C (TJ) Obsolete DIRECTFET™ MT N-Channel 20V 6290pF @ 10V 1.8W (Ta), 89W (Tc) 31A (Ta), 150A (Tc) 4.5V, 10V 2 mOhm @ 31A, 10V 2.45V @ 250µA 69nC @ 4.5V ±20V -
IRF6609TR1PBF
RFQ
Infineon Technologies MOSFET N-CH 20V 31A DIRECTFET DirectFET™ Isometric MT HEXFET® MOSFET (Metal Oxide) Surface Mount -40°C ~ 150°C (TJ) Obsolete DIRECTFET™ MT N-Channel 20V 6290pF @ 10V 1.8W (Ta), 89W (Tc) 31A (Ta), 150A (Tc) 4.5V, 10V 2 mOhm @ 31A, 10V 2.45V @ 250µA 69nC @ 4.5V ±20V -
IRF6609TR1
RFQ
Infineon Technologies MOSFET N-CH 20V 31A DIRECTFET DirectFET™ Isometric MT HEXFET® MOSFET (Metal Oxide) Surface Mount -40°C ~ 150°C (TJ) Obsolete DIRECTFET™ MT N-Channel 20V 6290pF @ 10V 1.8W (Ta), 89W (Tc) 31A (Ta), 150A (Tc) 4.5V, 10V 2 mOhm @ 31A, 10V 2.45V @ 250µA 69nC @ 4.5V ±20V -
IRF6609
RFQ
Infineon Technologies MOSFET N-CH 20V 31A DIRECTFET DirectFET™ Isometric MT HEXFET® MOSFET (Metal Oxide) Surface Mount -40°C ~ 150°C (TJ) Obsolete DIRECTFET™ MT N-Channel 20V 6290pF @ 10V 1.8W (Ta), 89W (Tc) 31A (Ta), 150A (Tc) 4.5V, 10V 2 mOhm @ 31A, 10V 2.45V @ 250µA 69nC @ 4.5V ±20V -
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