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Drain to Source Voltage (Vdss) :
Input Capacitance (Ciss) (Max) @ Vds :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
6 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
XMC1302-T038X0128AB
RFQ
Infineon Technologies MOSFET N-CH 30V 32A DIRECTFET DirectFET™ Isometric MX HEXFET® MOSFET (Metal Oxide) Surface Mount -40°C ~ 150°C (TJ) Obsolete DIRECTFET™ MX N-Channel 30V 5970pF @ 15V 2.8W (Ta), 89W (Tc) 32A (Ta), 180A (Tc) 4.5V, 10V 1.8 mOhm @ 32A, 10V 2.35V @ 250µA 71nC @ 4.5V ±20V -
XMC1302-T038X0064AB
RFQ
Infineon Technologies MOSFET N-CH 20V 16A DIRECTFET DirectFET™ Isometric MX HEXFET® MOSFET (Metal Oxide) Surface Mount -40°C ~ 150°C (TJ) Obsolete DIRECTFET™ MX N-Channel 30V 5970pF @ 15V 2.8W (Ta), 89W (Tc) 32A (Ta), 180A (Tc) 4.5V, 10V 1.8 mOhm @ 32A, 10V 2.35V @ 250µA 71nC @ 4.5V ±20V -
ESD5V0S1U-02VH6327
Per Unit
$0.8809
RFQ
Infineon Technologies MOSFET N-CH 25V 32A DIRECTFET-MX DirectFET™ Isometric MX HEXFET® MOSFET (Metal Oxide) Surface Mount -40°C ~ 150°C (TJ) Active DIRECTFET™ MX N-Channel 25V 4280pF @ 13V 2.8W (Ta), 75W (Tc) 32A (Ta), 160A (Tc) 4.5V, 10V 1.8 mOhm @ 32A, 10V 2.35V @ 100µA 53nC @ 4.5V ±20V -
IRF6635TR1PBF
RFQ
Infineon Technologies MOSFET N-CH 30V 32A DIRECTFET DirectFET™ Isometric MX HEXFET® MOSFET (Metal Oxide) Surface Mount -40°C ~ 150°C (TJ) Obsolete DIRECTFET™ MX N-Channel 30V 5970pF @ 15V 2.8W (Ta), 89W (Tc) 32A (Ta), 180A (Tc) 4.5V, 10V 1.8 mOhm @ 32A, 10V 2.35V @ 250µA 71nC @ 4.5V ±20V -
IRF6635
RFQ
Infineon Technologies MOSFET N-CH 30V 32A DIRECTFET DirectFET™ Isometric MX HEXFET® MOSFET (Metal Oxide) Surface Mount -40°C ~ 150°C (TJ) Obsolete DIRECTFET™ MX N-Channel 30V 5970pF @ 15V 2.8W (Ta), 89W (Tc) 32A (Ta), 180A (Tc) 4.5V, 10V 1.8 mOhm @ 32A, 10V 2.35V @ 250µA 71nC @ 4.5V ±20V -
IRF6635TR1
RFQ
Infineon Technologies MOSFET N-CH 30V 32A DIRECTFET DirectFET™ Isometric MX HEXFET® MOSFET (Metal Oxide) Surface Mount -40°C ~ 150°C (TJ) Obsolete DIRECTFET™ MX N-Channel 30V 5970pF @ 15V 2.8W (Ta), 89W (Tc) 32A (Ta), 180A (Tc) 4.5V, 10V 1.8 mOhm @ 32A, 10V 2.35V @ 250µA 71nC @ 4.5V ±20V -
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