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Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Gate Charge (Qg) (Max) @ Vgs :
Vgs (Max) :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
NCV4269A50DR2G
RFQ
ON Semiconductor MOSFET N-CH 20V 23A 8-SOIC 8-SOIC (0.154", 3.90mm Width) PowerTrench® MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO N-Channel 20V 5521pF @ 10V 3W (Ta) 23A (Ta) 2.5V, 4.5V 3.5 mOhm @ 23A, 4.5V 1.5V @ 250µA 73nC @ 4.5V ±12V -
NCV4263
RFQ
ON Semiconductor MOSFET N-CH 20V 23A 8-SOIC 8-SOIC (0.154", 3.90mm Width) PowerTrench® MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO N-Channel 20V 7191pF @ 10V 3W (Ta) 23A (Ta) 1.8V, 4.5V 3.5 mOhm @ 23A, 4.5V 1.5V @ 250µA 98nC @ 4.5V ±8V -
FDS6162N7
RFQ
ON Semiconductor MOSFET N-CH 20V 23A 8-SOIC 8-SOIC (0.154", 3.90mm Width) PowerTrench® MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO N-Channel 20V 5521pF @ 10V 3W (Ta) 23A (Ta) 2.5V, 4.5V 3.5 mOhm @ 23A, 4.5V 1.5V @ 250µA 73nC @ 4.5V ±12V -
FDS6064N7
RFQ
ON Semiconductor MOSFET N-CH 20V 23A 8-SOIC 8-SOIC (0.154", 3.90mm Width) PowerTrench® MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO N-Channel 20V 7191pF @ 10V 3W (Ta) 23A (Ta) 1.8V, 4.5V 3.5 mOhm @ 23A, 4.5V 1.5V @ 250µA 98nC @ 4.5V ±8V -
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