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Packaging :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
Drive Voltage (Max Rds On, Min Rds On) :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
9 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
NRVBA140T3
RFQ
ON Semiconductor MOSFET N-CH 100V 7.3A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB QFET® MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D²PAK (TO-263AB) N-Channel 100V 250pF @ 25V 3.75W (Ta), 40W (Tc) 7.3A (Tc) 10V 350 mOhm @ 3.65A, 10V 4V @ 250µA 7.5nC @ 10V ±25V -
NMC27C32BQE-200
RFQ
ON Semiconductor MOSFET N-CH 100V 7.3A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB QFET® MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D²PAK (TO-263AB) N-Channel 100V 290pF @ 25V 3.75W (Ta), 40W (Tc) 7.3A (Tc) 5V, 10V 350 mOhm @ 3.65A, 10V 2V @ 250µA 6nC @ 5V ±20V -
NM24C08BULM8X
RFQ
ON Semiconductor MOSFET N-CH 100V 7.3A I2PAK TO-262-3 Long Leads, I²Pak, TO-262AA QFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete I2PAK (TO-262) N-Channel 100V 290pF @ 25V 3.75W (Ta), 40W (Tc) 7.3A (Tc) 5V, 10V 350 mOhm @ 3.65A, 10V 2V @ 250µA 6nC @ 5V ±20V -
NM24C02LLMT8
RFQ
ON Semiconductor MOSFET N-CH 100V 7.3A I2PAK TO-262-3 Long Leads, I²Pak, TO-262AA QFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete I2PAK (TO-262) N-Channel 100V 250pF @ 25V 3.75W (Ta), 40W (Tc) 7.3A (Tc) 10V 350 mOhm @ 3.65A, 10V 4V @ 250µA 7.5nC @ 10V ±25V -
NE56612-27GW
RFQ
ON Semiconductor MOSFET N-CH 100V 7.3A TO-220 TO-220-3 QFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-220-3 N-Channel 100V 290pF @ 25V 40W (Tc) 7.3A (Tc) 5V, 10V 350 mOhm @ 3.65A, 10V 2V @ 250µA 6nC @ 5V ±20V -
NE56611-27GW
RFQ
ON Semiconductor MOSFET N-CH 100V 7.3A TO-220 TO-220-3 QFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-220-3 N-Channel 100V 250pF @ 25V 40W (Tc) 7.3A (Tc) 10V 350 mOhm @ 3.65A, 10V 4V @ 250µA 7.5nC @ 10V ±25V -
FQB7N10LTM
RFQ
ON Semiconductor MOSFET N-CH 100V 7.3A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB QFET® MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D²PAK (TO-263AB) N-Channel 100V 290pF @ 25V 3.75W (Ta), 40W (Tc) 7.3A (Tc) 5V, 10V 350 mOhm @ 3.65A, 10V 2V @ 250µA 6nC @ 5V ±20V -
FQP7N10L
RFQ
ON Semiconductor MOSFET N-CH 100V 7.3A TO-220 TO-220-3 QFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-220-3 N-Channel 100V 290pF @ 25V 40W (Tc) 7.3A (Tc) 5V, 10V 350 mOhm @ 3.65A, 10V 2V @ 250µA 6nC @ 5V ±20V -
FQP7N10
RFQ
ON Semiconductor MOSFET N-CH 100V 7.3A TO-220 TO-220-3 QFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-220-3 N-Channel 100V 250pF @ 25V 40W (Tc) 7.3A (Tc) 10V 350 mOhm @ 3.65A, 10V 4V @ 250µA 7.5nC @ 10V ±25V -
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