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Packaging :
Supplier Device Package :
Power Dissipation (Max) :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max)
NMC27C020Q-150
RFQ
ON Semiconductor MOSFET N-CH 100V 5.6A I2PAK TO-262-3 Long Leads, I²Pak, TO-262AA - MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete I2PAK (TO-262) N-Channel 100V 235pF @ 25V 3.8W (Ta), 37W (Tc) 5.6A (Tc) 5V 440 mOhm @ 2.8A, 5V 2V @ 250µA 8nC @ 5V ±20V
NM3428-4L
RFQ
ON Semiconductor MOSFET N-CH 100V 5.6A I2PAK TO-262-3 Long Leads, I²Pak, TO-262AA - Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete I2PAK (TO-262) N-Channel 100V 235pF @ 25V 3.8W (Ta), 37W (Tc) 5.6A (Tc) 5V 440 mOhm @ 2.8A, 5V 2V @ 250µA 8nC @ 5V ±20V
NJ1006M5HA-002
RFQ
ON Semiconductor MOSFET N-CH 100V 5.6A TO-220 TO-220-3 - Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-220-3 N-Channel 100V 235pF @ 25V 37W (Tc) 5.6A (Tc) 5V 440 mOhm @ 2.8A, 5V 2V @ 250µA 8nC @ 5V ±20V
IRL510A
RFQ
ON Semiconductor MOSFET N-CH 100V 5.6A TO-220 TO-220-3 - Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-220-3 N-Channel 100V 235pF @ 25V 37W (Tc) 5.6A (Tc) 5V 440 mOhm @ 2.8A, 5V 2V @ 250µA 8nC @ 5V ±20V
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