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Packaging :
Supplier Device Package :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
Drive Voltage (Max Rds On, Min Rds On) :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
NM93C56M8X
RFQ
ON Semiconductor MOSFET N-CH 250V 6.2A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 QFET® MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete D-Pak N-Channel 250V 530pF @ 25V 2.5W (Ta), 50W (Tc) 6.2A (Tc) 10V 550 mOhm @ 3.1A, 10V 5V @ 250µA 15nC @ 10V ±30V -
NM93C46AM8X SOP8
RFQ
ON Semiconductor MOSFET N-CH 250V 6.2A IPAK TO-251-3 Short Leads, IPak, TO-251AA QFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete I-PAK N-Channel 250V 530pF @ 25V 2.5W (Ta), 50W (Tc) 6.2A (Tc) 10V 550 mOhm @ 3.1A, 10V 5V @ 250µA 15nC @ 10V ±30V -
MC74AC574MEL
Per Unit
$0.4463
RFQ
ON Semiconductor MOSFET N-CH 250V 6.2A DPAK-3 TO-252-3, DPak (2 Leads + Tab), SC-63 UniFET™ MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active D-Pak N-Channel 250V 635pF @ 25V 56W (Tc) 6.2A (Tc) 5V, 10V 550 mOhm @ 3.1A, 10V 2V @ 250µA 16nC @ 10V ±20V -
FQD8N25TF
RFQ
ON Semiconductor MOSFET N-CH 250V 6.2A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 QFET® MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete D-Pak N-Channel 250V 530pF @ 25V 2.5W (Ta), 50W (Tc) 6.2A (Tc) 10V 550 mOhm @ 3.1A, 10V 5V @ 250µA 15nC @ 10V ±30V -
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