- Manufacture :
- Part Status :
- Supplier Device Package :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
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4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | |
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ON Semiconductor | MOSFET N-CH 55V 2.6A SOT-223 | TO-261-4, TO-261AA | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | SOT-223-4 | N-Channel | 55V | 250pF @ 25V | 1.1W (Ta) | 2.6A (Ta) | 10V | 90 mOhm @ 2.6A, 10V | 4V @ 250µA | 17nC @ 20V | ±20V | |||||
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ON Semiconductor | MOSFET N-CH 55V 2.6A SOT-223-4 | TO-261-4, TO-261AA | Automotive, AEC-Q101, UltraFET™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | SOT-223-4 | N-Channel | 55V | 250pF @ 25V | 1.1W (Ta) | 2.6A (Ta) | 10V | 90 mOhm @ 2.6A, 10V | 4V @ 250µA | 17nC @ 20V | ±20V | |||||
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Infineon Technologies | MOSFET N-CH 60V 2.6A SOT-223 | TO-261-4, TO-261AA | SIPMOS® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | PG-SOT223-4 | N-Channel | 60V | 380pF @ 25V | 1.8W (Ta) | 2.6A (Ta) | 4.5V, 10V | 90 mOhm @ 2.6A, 10V | 2V @ 20µA | 20nC @ 10V | ±20V | |||||
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ON Semiconductor | MOSFET N-CH 55V 2.6A SOT-223 | TO-261-4, TO-261AA | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | SOT-223-4 | N-Channel | 55V | 250pF @ 25V | 1.1W (Ta) | 2.6A (Ta) | 10V | 90 mOhm @ 2.6A, 10V | 4V @ 250µA | 17nC @ 20V | ±20V |