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4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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ON Semiconductor | MOSFET P-CH 200V 2.8A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | QFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | D²PAK (TO-263AB) | P-Channel | 200V | 250pF @ 25V | 3.13W (Ta), 52W (Tc) | 2.8A (Tc) | 10V | 2.7 Ohm @ 1.4A, 10V | 5V @ 250µA | 8nC @ 10V | ±30V | - | |||||
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ON Semiconductor | MOSFET P-CH 200V 2.8A I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA | QFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | I2PAK (TO-262) | P-Channel | 200V | 250pF @ 25V | 3.13W (Ta), 52W (Tc) | 2.8A (Tc) | 10V | 2.7 Ohm @ 1.4A, 10V | 5V @ 250µA | 8nC @ 10V | ±30V | - | ||||
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ON Semiconductor | MOSFET P-CH 200V 2.8A TO-220 | TO-220-3 | QFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-220AB | P-Channel | 200V | 250pF @ 25V | 52W (Tc) | 2.8A (Tc) | 10V | 2.7 Ohm @ 1.4A, 10V | 5V @ 250µA | 8nC @ 10V | ±30V | - | ||||
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ON Semiconductor | MOSFET P-CH 200V 2.8A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | QFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | D²PAK (TO-263AB) | P-Channel | 200V | 250pF @ 25V | 3.13W (Ta), 52W (Tc) | 2.8A (Tc) | 10V | 2.7 Ohm @ 1.4A, 10V | 5V @ 250µA | 8nC @ 10V | ±30V | - |