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Packaging :
Drain to Source Voltage (Vdss) :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
PBSS302NZ
RFQ
ON Semiconductor MOSFET N-CH 250V 21A TO-220F TO-220-3 Full Pack - Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-220F N-Channel 250V 3400pF @ 25V 50W (Tc) 21A (Tc) 10V 140 mOhm @ 10.5A, 10V 4V @ 250µA 123nC @ 10V ±30V -
NTP-7100L
RFQ
ON Semiconductor MOSFET N-CH 200V 21A TO-220 TO-220-3 QFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-220-3 N-Channel 200V 2200pF @ 25V 140W (Tc) 21A (Tc) 5V, 10V 140 mOhm @ 10.5A, 10V 2V @ 250µA 35nC @ 5V ±20V -
MC74HC123AN
Per Unit
$1.0157
RFQ
ON Semiconductor MOSFET N-CH 200V 21A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB QFET® MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active D²PAK (TO-263AB) N-Channel 200V 2200pF @ 25V 3.13W (Ta), 140W (Tc) 21A (Tc) 5V, 10V 140 mOhm @ 10.5A, 10V 2V @ 250µA 35nC @ 5V ±20V -
FQP19N20L
RFQ
ON Semiconductor MOSFET N-CH 200V 21A TO-220 TO-220-3 QFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-220-3 N-Channel 200V 2200pF @ 25V 140W (Tc) 21A (Tc) 5V, 10V 140 mOhm @ 10.5A, 10V 2V @ 250µA 35nC @ 5V ±20V -
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