Chat with us, powered by LiveChat
Build a global manufacturer and supplier trusted trading platform.
Supplier Device Package :
Drain to Source Voltage (Vdss) :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Drive Voltage (Max Rds On, Min Rds On) :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max)
NX5DV330PW112
RFQ
ON Semiconductor MOSFET N-CH 50V 70A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB - MOSFET (Metal Oxide) Surface Mount -65°C ~ 175°C (TJ) Obsolete D²PAK (TO-263AB) N-Channel 50V 1930pF @ 25V 130W (Tc) 70A (Tc) 10V 13 mOhm @ 35A, 10V 4V @ 250µA 100nC @ 10V ±20V
MURB1620CTT4
Per Unit
$1.0838
RFQ
ON Semiconductor MOSFET P-CHANNEL 60V 80A ATPAK TO-252-3, DPak (2 Leads + Tab), SC-63 - MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active ATPAK P-Channel 60V 5400pF @ 20V 84W (Tc) 80A (Ta) 4.5V, 10V 13 mOhm @ 35A, 10V 2.6V @ 1mA 115nC @ 10V ±20V
MC33761SNT1-025T1G
Per Unit
$0.8723
RFQ
ON Semiconductor MOSFET P-CH 60V 70A ATPAK ATPAK (2 leads+tab) - MOSFET (Metal Oxide) Surface Mount 150°C (TJ) Active ATPAK P-Channel 60V 5400pF @ 20V 70W (Tc) 70A (Ta) 4.5V, 10V 13 mOhm @ 35A, 10V - 115nC @ 10V ±20V
NDB7051
RFQ
ON Semiconductor MOSFET N-CH 50V 70A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB - MOSFET (Metal Oxide) Surface Mount -65°C ~ 175°C (TJ) Obsolete D²PAK (TO-263AB) N-Channel 50V 1930pF @ 25V 130W (Tc) 70A (Tc) 10V 13 mOhm @ 35A, 10V 4V @ 250µA 100nC @ 10V ±20V
Page 1 / 1