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Packaging :
Supplier Device Package :
Drain to Source Voltage (Vdss) :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max)
IB1205LD-1W
Per Unit
$0.9753
RFQ
Infineon Technologies MOSFET N-CH 200V 14.5A TO263 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB SIPMOS® MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete D²PAK (TO-263AB) N-Channel 200V 1120pF @ 25V 95W (Tc) 14.5A (Tc) 10V 200 mOhm @ 9A, 10V 4V @ 1mA - ±20V
NZH7V5C
RFQ
ON Semiconductor MOSFET P-CH 150V 18A TO-3P TO-3P-3, SC-65-3 - Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-3P P-Channel 150V 3000pF @ 25V 204W (Tc) 18A (Tc) 10V 200 mOhm @ 9A, 10V 4V @ 250µA 130nC @ 10V ±30V
SFH9154
RFQ
ON Semiconductor MOSFET P-CH 150V 18A TO-3P TO-3P-3, SC-65-3 - Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-3P P-Channel 150V 3000pF @ 25V 204W (Tc) 18A (Tc) 10V 200 mOhm @ 9A, 10V 4V @ 250µA 130nC @ 10V ±30V
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