Chat with us, powered by LiveChat
Build a global manufacturer and supplier trusted trading platform.
Supplier Device Package :
Input Capacitance (Ciss) (Max) @ Vds :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
NCP1360BABCYSNT1G
RFQ
ON Semiconductor MOSFET N-CH 500V 20A TO-247 TO-247-3 - Tube MOSFET (Metal Oxide) Through Hole - Obsolete TO-247 N-Channel 500V 4100pF @ 25V - 20A (Tc) - 270 mOhm @ 11A, 10V 4V @ 250µA 190nC @ 10V - -
IXFV22N50P
RFQ
IXYS MOSFET N-CH 500V 22A PLUS220 TO-220-3, Short Tab HiPerFET™, PolarHT™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete PLUS220 N-Channel 500V 2630pF @ 25V 350W (Tc) 22A (Tc) 10V 270 mOhm @ 11A, 10V 5.5V @ 2.5mA 50nC @ 10V ±30V -
Page 1 / 1