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2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | |
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Infineon Technologies | MOSFET N-CH 200V 14.5A TO263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | SIPMOS® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | D²PAK (TO-263AB) | N-Channel | 200V | 1120pF @ 25V | 95W (Tc) | 14.5A (Tc) | 10V | 200 mOhm @ 9A, 5V | 4V @ 1mA | - | ±20V | |||||
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Infineon Technologies | MOSFET N-CH 200V 14.5A TO220AB | TO-220-3 | SIPMOS® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | PG-TO-220-3 | N-Channel | 200V | 1120pF @ 25V | 95W (Tc) | 14.5A (Tc) | 5V | 200 mOhm @ 9A, 5V | 4V @ 1mA | - | ±20V |