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Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
Gate Charge (Qg) (Max) @ Vgs :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
IPD20N03L G
RFQ
Infineon Technologies MOSFET N-CH 30V 30A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 OptiMOS™ MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete PG-TO252-3 N-Channel 30V 695pF @ 25V 42W (Tc) 30A (Tc) 4.5V, 10V 20 mOhm @ 15A, 10V 2V @ 25µA 19nC @ 5V ±20V -
IPD20N03L
RFQ
Infineon Technologies MOSFET N-CH 30V 30A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 OptiMOS™ MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete PG-TO252-3 N-Channel 30V 700pF @ 25V 60W (Tc) 30A (Tc) 4.5V, 10V 20 mOhm @ 15A, 10V 2V @ 25µA 11nC @ 5V ±20V -
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