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4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
RCR8212ESS
RFQ
Vishay Siliconix MOSFET P-CH 30V 2.7A SC-70-6 TO-236-3, SC-59, SOT-23-3 TrenchFET® MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete SOT-23-3 (TO-236) P-Channel 200V 510pF @ 25V 750mW (Ta) 380mA (Ta) 6V, 10V 2.35 Ohm @ 500mA, 10V 4.5V @ 250µA 12nC @ 10V ±20V -
QM03N65U
RFQ
Vishay Siliconix MOSFET P-CH 60V 1.25A SOT23-3 TO-236-3, SC-59, SOT-23-3 TrenchFET® MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete SOT-23-3 (TO-236) P-Channel 200V 510pF @ 25V 750mW (Ta) 380mA (Ta) 6V, 10V 2.35 Ohm @ 500mA, 10V 4.5V @ 250µA 12nC @ 10V ±20V -
SI2327DS-T1-GE3
RFQ
Vishay Siliconix MOSFET P-CH 200V 0.38A SOT-23 TO-236-3, SC-59, SOT-23-3 TrenchFET® MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete SOT-23-3 (TO-236) P-Channel 200V 510pF @ 25V 750mW (Ta) 380mA (Ta) 6V, 10V 2.35 Ohm @ 500mA, 10V 4.5V @ 250µA 12nC @ 10V ±20V -
SI2327DS-T1-E3
RFQ
Vishay Siliconix MOSFET P-CH 200V 0.38A SOT23-3 TO-236-3, SC-59, SOT-23-3 TrenchFET® MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete SOT-23-3 (TO-236) P-Channel 200V 510pF @ 25V 750mW (Ta) 380mA (Ta) 6V, 10V 2.35 Ohm @ 500mA, 10V 4.5V @ 250µA 12nC @ 10V ±20V -
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