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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
SGM2022-IYN6
RFQ
Vishay Siliconix MOSFET P-CH 20V 6.2A 8-TSSOP TrenchFET® MOSFET (Metal Oxide) Surface Mount -50°C ~ 150°C (TJ) Obsolete PowerPAK® 1212-8 N-Channel 8V 3810pF @ 4V 3.8W (Ta), 52W (Tc) 35A (Tc) 2.5V, 4.5V 3.5 mOhm @ 15A, 4.5V 1V @ 250µA 105nC @ 8V ±8V -
QM2538M3
RFQ
Vishay Siliconix MOSFET P-CH 12V 6.8A 8-TSSOP TrenchFET® MOSFET (Metal Oxide) Surface Mount -50°C ~ 150°C (TJ) Obsolete PowerPAK® 1212-8 N-Channel 8V 3810pF @ 4V 3.8W (Ta), 52W (Tc) 35A (Tc) 2.5V, 4.5V 3.5 mOhm @ 15A, 4.5V 1V @ 250µA 105nC @ 8V ±8V -
SI7100DN-T1-GE3
RFQ
Vishay Siliconix MOSFET N-CH 8V 35A PPAK 1212-8 TrenchFET® MOSFET (Metal Oxide) Surface Mount -50°C ~ 150°C (TJ) Obsolete PowerPAK® 1212-8 N-Channel 8V 3810pF @ 4V 3.8W (Ta), 52W (Tc) 35A (Tc) 2.5V, 4.5V 3.5 mOhm @ 15A, 4.5V 1V @ 250µA 105nC @ 8V ±8V -
SI7100DN-T1-E3
RFQ
Vishay Siliconix MOSFET N-CH 8V 35A 1212-8 TrenchFET® MOSFET (Metal Oxide) Surface Mount -50°C ~ 150°C (TJ) Obsolete PowerPAK® 1212-8 N-Channel 8V 3810pF @ 4V 3.8W (Ta), 52W (Tc) 35A (Tc) 2.5V, 4.5V 3.5 mOhm @ 15A, 4.5V 1V @ 250µA 105nC @ 8V ±8V -
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