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Supplier Device Package :
Power Dissipation (Max) :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
PAC151JRGQ
RFQ
ON Semiconductor MOSFET N-CH 500V 11A TO-220 TO-220-3 FRFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-220-3 N-Channel 500V 2055pF @ 25V 195W (Tc) 11A (Tc) 10V 550 mOhm @ 5.5A, 10V 4V @ 250µA 55nC @ 10V ±30V -
ML4813IS
Per Unit
$2.9000
RFQ
ON Semiconductor MOSFET N-CH 500V 11A TO-220F TO-220-3 Full Pack FRFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-220F N-Channel 500V 2055pF @ 25V 48W (Tc) 11A (Tc) 10V 550 mOhm @ 5.5A, 10V 4V @ 250µA 55nC @ 10V ±30V -
FQP11N50CF
RFQ
ON Semiconductor MOSFET N-CH 500V 11A TO-220 TO-220-3 FRFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-220-3 N-Channel 500V 2055pF @ 25V 195W (Tc) 11A (Tc) 10V 550 mOhm @ 5.5A, 10V 4V @ 250µA 55nC @ 10V ±30V -
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