Chat with us, powered by LiveChat
Build a global manufacturer and supplier trusted trading platform.
Packaging :
Supplier Device Package :
Drain to Source Voltage (Vdss) :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Drive Voltage (Max Rds On, Min Rds On) :
Gate Charge (Qg) (Max) @ Vgs :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max)
PBSS4480X
RFQ
ON Semiconductor MOSFET N-CH 60V 100A TO220-3 TO-220-3 - Bulk MOSFET (Metal Oxide) Through Hole 150°C (TJ) Obsolete TO-220-3 N-Channel 60V 6900pF @ 20V 1.75W (Ta), 75W (Tc) 100A (Ta) 4V, 10V 7.2 mOhm @ 50A, 10V - 135nC @ 10V ±20V
PAL20RA10JM
RFQ
ON Semiconductor MOSFET N-CH 40V 76A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 - MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete DPAK N-Channel 40V 3220pF @ 25V 83W (Tc) 76A (Tc) 5V, 10V 7.2 mOhm @ 50A, 10V 3.5V @ 250µA 51nC @ 10V ±20V
2SK4171
RFQ
ON Semiconductor MOSFET N-CH 60V 100A TO220-3 TO-220-3 - Bulk MOSFET (Metal Oxide) Through Hole 150°C (TJ) Obsolete TO-220-3 N-Channel 60V 6900pF @ 20V 1.75W (Ta), 75W (Tc) 100A (Ta) 4V, 10V 7.2 mOhm @ 50A, 10V - 135nC @ 10V ±20V
NTD5803NT4G
RFQ
ON Semiconductor MOSFET N-CH 40V 76A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 - MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete DPAK N-Channel 40V 3220pF @ 25V 83W (Tc) 76A (Tc) 5V, 10V 7.2 mOhm @ 50A, 10V 3.5V @ 250µA 51nC @ 10V ±20V
Page 1 / 1