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5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max)
PT7M6127CLT3A
Per Unit
$0.6090
RFQ
Diodes Incorporated MOSFET N-CH 60V 14.8A TO252 TO-252-5, DPak (4 Leads + Tab), TO-252AD Automotive, AEC-Q101 MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active TO-252-4L N-Channel 60V 2962pF @ 30V 2.1W (Ta), 100W (Tc) 90A (Tc) 4.5V, 10V 5.6 mOhm @ 50A, 10V 3V @ 250µA 47.1nC @ 10V ±20V
PT7C5002LDWE
Per Unit
$0.5568
RFQ
Diodes Incorporated MOSFET N-CH 60V 16.3A TO-252-3, DPak (2 Leads + Tab), SC-63 - MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active DPAK N-Channel 60V 2962pF @ 30V 2.1W (Ta), 100W (Tc) 90A (Tc) 4.5V, 10V 5.6 mOhm @ 50A, 10V 3V @ 250µA 47.1nC @ 10V ±20V
PBSS4612PA
RFQ
ON Semiconductor MOSFET N-CH 30V 100A ATPAK ATPAK (2 leads+tab) - MOSFET (Metal Oxide) Surface Mount 150°C (TJ) Obsolete ATPAK N-Channel 30V 4600pF @ 10V 60W (Tc) 100A (Ta) 4.5V, 10V 5.6 mOhm @ 50A, 10V - 70nC @ 10V ±20V
IRFH5106TR2PBF
RFQ
Infineon Technologies MOSFET N-CH 60V 100A 5X6 PQFN 8-PowerVDFN HEXFET® Cut Tape (CT) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-PQFN (5x6) N-Channel 60V 3090pF @ 25V 3.6W (Ta), 114W (Tc) 21A (Ta), 100A (Tc) 10V 5.6 mOhm @ 50A, 10V 4V @ 250µA 75nC @ 10V ±20V
ATP204-TL-H
RFQ
ON Semiconductor MOSFET N-CH 30V 100A ATPAK ATPAK (2 leads+tab) - MOSFET (Metal Oxide) Surface Mount 150°C (TJ) Obsolete ATPAK N-Channel 30V 4600pF @ 10V 60W (Tc) 100A (Ta) 4.5V, 10V 5.6 mOhm @ 50A, 10V - 70nC @ 10V ±20V
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