- Package / Case :
- Series :
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- Part Status :
- Supplier Device Package :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Drive Voltage (Max Rds On, Min Rds On) :
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2 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Infineon Technologies | MOSFET N-CH 60V 50A TDSON-8 | 8-PowerTDFN | OptiMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-TDSON-8 | N-Channel | 60V | 5100pF @ 30V | 2.5W (Ta), 69W (Tc) | 15A (Ta), 50A (Tc) | 4.5V, 10V | 6.7 mOhm @ 50A, 10V | 2.2V @ 35µA | 67nC @ 10V | ±20V | - | ||||||
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Infineon Technologies | MOSFET N-CH 60V 16A 5X6 PQFN | 8-PowerVDFN | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-PQFN (5x6) | N-Channel | 60V | 2490pF @ 25V | 3.6W (Ta), 100W (Tc) | 16A (Ta), 89A (Tc) | 10V | 6.7 mOhm @ 50A, 10V | 4V @ 100µA | 60nC @ 10V | ±20V | - |