- Manufacture :
- Package / Case :
- Series :
- Operating Temperature :
- Supplier Device Package :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
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4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Infineon Technologies | MOSFET N-CH 30V 35A TDSON-8 | 8-PowerTDFN | OptiMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-TDSON-8 | N-Channel | 30V | 3300pF @ 15V | 2.5W (Ta), 69W (Tc) | 35A (Ta), 100A (Tc) | 4.5V, 10V | 1.3 mOhm @ 30A, 10V | 2V @ 250µA | 52nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 25V 163A WDSON-2 | 3-WDSON | OptiMOS™ | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Active | MG-WDSON-2, CanPAK M™ | N-Channel | 25V | 4400pF @ 12V | 2.8W (Ta), 57W (Tc) | 36A (Ta), 163A (Tc) | 4.5V, 10V | 1.3 mOhm @ 30A, 10V | 2V @ 250µA | 62nC @ 10V | ±20V | - | |||||
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ON Semiconductor | MOSFET N-CH 30V 30A 8-PQFN | 8-PowerWDFN | PowerTrench® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | Power33 | N-Channel | 30V | 5860pF @ 15V | 2.8W (Ta), 65W (Tc) | 30A (Ta), 174A (Tc) | 4.5V, 10V | 1.3 mOhm @ 30A, 10V | 2.5V @ 1mA | 94nC @ 10V | ±20V | - | |||||
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ON Semiconductor | MOSFET N-CH 30V 8-PQFN | 8-PowerWDFN | PowerTrench® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | Power33 | N-Channel | 30V | 5860pF @ 15V | 2.4W (Ta), 54W (Tc) | 30A (Ta), 75A (Tc) | 4.5V, 10V | 1.3 mOhm @ 30A, 10V | 2.5V @ 1mA | 94nC @ 10V | ±20V | - |