- Manufacture :
- Package / Case :
- Series :
- Supplier Device Package :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
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4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Infineon Technologies | MOSFET N-CH 30V 18A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SO | N-Channel | 30V | 2315pF @ 15V | 2.5W (Ta) | 18A (Ta) | 4.5V, 10V | 4.8 mOhm @ 18A, 10V | 2.35V @ 50µA | 26nC @ 4.5V | ±20V | - | |||||
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ON Semiconductor | MOSFET N-CH 30V 16.4A 52A 5DFN | 8-PowerTDFN, 5 Leads | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 5-DFN (5x6) (8-SOFL) | N-Channel | 30V | 1670pF @ 15V | 2.51W (Ta), 25.5W (Tc) | 16.4A (Ta), 52A (Tc) | 4.5V, 10V | 4.8 mOhm @ 18A, 10V | 2.1V @ 250µA | 18.2nC @ 10V | ±20V | - | |||||
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ON Semiconductor | MOSFET N-CH 30V 16.4A 52A 5DFN | 8-PowerTDFN, 5 Leads | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 5-DFN (5x6) (8-SOFL) | N-Channel | 30V | 1670pF @ 15V | 2.51W (Ta), 25.5W (Tc) | 16.4A (Ta), 52A (Tc) | 4.5V, 10V | 4.8 mOhm @ 18A, 10V | 2.1V @ 250µA | 18.2nC @ 10V | ±20V | - | |||||
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ON Semiconductor | MOSFET N-CH 30V 18A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | PowerTrench®, SyncFET™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SOIC | N-Channel | 30V | 2670pF @ 15V | 2.5W (Ta) | 18A (Ta) | 4.5V, 10V | 4.8 mOhm @ 18A, 10V | 3V @ 1mA | 41nC @ 10V | ±20V | - |